unisonic technologies co., ltd 1n60a power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2009 unisonic technologies co., ltd qw-r502-091,e 0.5 amps, 600/650 volts n-channel mosfet ? description the utc 1n60a is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosf et is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) =15 ? @ v gs = 10v. * ultra low gate charge (typical 8.0nc) * low reverse transfer capacitance (c rss = 3.0 pf(max)) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 1n60al-x-t92-b 1n60ag-x-t92-b to-92 g d s tape box 1n60al-x-t92-k 1n60ag-x-t92-k to-92 g d s bulk note: pin assignment: g: gate d: drain s: source (1) b: tape box, k: bulk (2) t92: to-92 (3) a: 600v, b: 650v (4) h: halogen free, l: lead free 1n60al -x -t92 -b (1)packing type (2)package type (3)drain-source voltage (4)lead plating
1n60a power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-091,e ? absolute maximum ratings ( t c = 25c, unless otherwise specified.) parameter symbol ratings unit 1n60a-a 600 v drain-source voltage 1n60a-b v dss 650 v gate-source voltage v gss 30 v continuous drain current i d 0.5 a pulsed drain current (note 2) i dm 2 a single pulse(note 3) e as 50 mj avalanche energy repetitive(note 2) e ar 3.6 4.0 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation (t c =25c) 3 w derate above 25c p d 25 mw/c junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l=92mh, i as =0.8a, v dd =50v, r g =0 ? , starting t j =25c 4. i sd 1.0a, di/dt 100a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol min typ max unit junction to ambient ja 120 c/w ? electrical characteristics (t j =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics 1n60a-a 600 v drain-source breakdown voltage 1n60a-b bv dss v gs = 0v, i d = 250 a 650 v drain-source leakage current i dss v ds = 600v, v gs = 0v 10 a forward v gs = 20v, v ds = 0v 100 na gate-source leakage current reverse i gss v gs = -20v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss /t j i d = 250 a referenced to 25c 0.4 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.2 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 0.5a 11 15 ? dynamic characteristics input capacitance c iss 100 pf output capacitance c oss 20 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1mhz 3 pf switching characteristics turn-on delay time t d (on) 12 34 ns turn-on rise time t r 11 32 ns turn-off delay time t d (off) 40 90 ns turn-off fall time t f v dd =300v, i d =0.5a, r g =5 ? (note 1,2) 18 46 ns total gate charge q g 8 10 nc gate-source charge q gs 1.8 nc gate-drain charge q gd v ds =480v, v gs =10v, i d =0.8a (note 1,2) 4.0 nc
1n60a power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-091,e ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0v, i sd = 1.2a 1.6 v maximum continuous drain-source diode forward current i s 1.2 a maximum pulsed drain-source diode forward current i sm 4.8 a reverse recovery time t rr 136 ns reverse recovery charge q rr v gs =0v, i sd = 1.2a di/dt = 100a/ s 0.3 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature.
1n60a power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-091,e ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + fig. 1a peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period fig. 1b peak diode recovery dv/dt waveforms
1n60a power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-091,e ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% v ds 90% 10% v gs t d(on) t r t d(off) t f fig. 2a switching test circuit fig. 2b switching waveforms 50k ? 0.3 f dut v ds same type as d.u.t. 0.2 f 12v v gs 1ma 10v charge q gs q gd q g v gs fig. 3a gate charge test circuit fig. 3b gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
1n60a power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-091,e ? typical characteristics 10 0 10 1 10 0 drain-source voltage, v ds (v) drain current, i d (a) output characteristics 250 s pulse test t c =25c 10 -1 v gs top: 15.0v 10.0v 8.0v 7.0v 6.0v 5.5v 5v bottorm:4.5v 10 0 10 -1 2 gate-source voltage, v gs (v) drain current, i d (a) transfer characteristics 46 810 v ds =50v 250 s pulse test 4.5v 0 0.0 drain-source on-resistance, r ds(on) ( ) drain current, i d (a) 0.5 1.0 2.5 v gs =10v t j =25c v gs =20v 1.5 2.0 5 10 15 25 30 on-resistance vs. drain current 20 10 0 10 -1 0.2 source-drain voltage, v sd (v) reverse drain current, i dr (a) source- drain diode forward voltage 1.6 0.4 0.6 0.8 1.0 1.2 1.4 v gs =0v 250 s pulse test 200 0 10 -1 drain-sourcevoltage, v ds (v) capacitance (pf) capacitance vs. drain-source voltage 150 50 100 10 0 10 1 v gs =0v f = 1mhz c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd c rss c iss c oss 0 gate-source voltage, v gs (v) total gate charge, q g (nc) 2 4 10 i d =1.0a 6 8 8 10 12 gate charge vs. gate-source voltage 6 4 2 0 v ds =480v v ds =300v v ds =120v
1n60a power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-091,e ? typical characteristics (cont.) -100 drain-source breakdown voltage, bv dss, (normalized) junction temperature, t j (c) -50 50 200 v gs =0v i d =250 a 100 150 1.2 breakdown voltage vs. temperature 0 1.1 1.0 0.9 0.8 -100 drain-source on-resistance, r ds(on) (normalized) junction temperature, t j (c) -50 50 200 v gs =10v i d =0.5a 100 150 3.0 on-resistance vs. temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 10 1 10 -1 10 -2 drain-source voltage, v ds (v) drain current, i d (a) max. safe operating area 10 2 1ms 10 1 10 0 100 s 10ms 10 0 10 3 operation in this area is limited by r ds(on) t c =25c t j =150c single pulse drain current, i d (a) case temperature, t c (c) 75 100 150 1.0 max. drain current vs. case temperature 0.0 125 50 25 0.5 square wave pulse duration, t 1 (sec) thermal response, jc (t) thermal response 10 0 10 -5 10 0 10 -1 10 -4 10 -3 10 -2 10 -1 10 1 0.5 0 . 0 5 0 . 0 2 single pulse 0 . 0 1 0.1 0.2 jc (t) = 3.45c/w max. duty factor, d=t1/t2 t jm -t c =p dm jc (t)
1n60a power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-091,e utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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